• DocumentCode
    355134
  • Title

    Effect of facet roughness on etched-facet semiconductor laser diodes

  • Author

    Francis, D.A. ; Chang-Hasnain, Connie J.

  • Author_Institution
    Edward L. Ginzton Lab., Stanford Univ., CA, USA
  • fYear
    1996
  • fDate
    2-7 June 1996
  • Firstpage
    423
  • Lastpage
    424
  • Abstract
    Summary form only given. In this paper, we investigate the effect of roughness on the reflectivity of laser facets. Given that mask pixel size is one of the possible sources of roughness and that high-resolution e-beam mask fabrication is costly, it is important to find the mask resolution required so that the fabricated laser performance is not significantly affected. To assess the importance of the roughness on the performance of our modeled devices, we calculate the light versus current (LI) characteristics, the coupling to higher order modes and the far-field patterns of etched-facet laser diodes with varying roughness.
  • Keywords
    etching; optical fabrication; reflectivity; semiconductor lasers; etched-facet semiconductor laser diode; fabrication; facet roughness; far-field pattern; light current characteristics; mask pixel size; mode coupling; reflectivity; Diode lasers; Electrons; Etching; Laser modes; Mirrors; Optical materials; Reflectivity; Ring lasers; Semiconductor diodes; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on
  • Conference_Location
    Anaheim, CA, USA
  • Print_ISBN
    1-55752-443-2
  • Type

    conf

  • Filename
    864871