Large signal characterization and numerical modeling of the GaAs/AlGaAs HBT

Author

Teeter, D.A. ; East, J.R. ; Mains, R.K. ; Haddad, G.I.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

651

Abstract

A numerical model for GaAs/AlGaAs HBTs (heterojunction bipolar transistors) which includes velocity overshoot effects has been developed. Good agreement between measured and modeled small signal characteristics has been obtained. To understand the large signal performance of the HBT, the model has been used to parameterize several typical device structures. At low frequencies, the parameterization method describes the large signal behavior of the HBT reasonably well up to moderate power levels. At higher frequencies, the accuracy of the method degrades. High-frequency simulation results have been compared with measurements made with a 26.5 to 40 GHz active load pull system. Details of the measurement system, sources of error, and methods to reduce the error are discussed.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave measurement; semiconductor device models; solid-state microwave devices; 26.5 to 40 GHz; GaAs-AlGaAs; HBT; active load pull system; large signal performance; measurement errors; numerical modeling; parameterization method; power levels; small signal characteristics; velocity overshoot effects; Calibration; Circuits; Computational modeling; Gallium arsenide; Heterojunction bipolar transistors; Numerical models; Poisson equations; Radio frequency; Reflection; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147087

Filename

147087