Title :
Optical control of microwave active band-pass filter using MESFETs
Author :
Yamamoto, Y. ; Kawasaki, K. ; Itoh, T.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
A semiconductor-laser-tuned active band-pass filter is developed using a gate-to-source capacitance of an exposed MESFET for tuning. As the gate-to source voltage of the capacitor MESFET is higher than -1.67 V, a laser irradiance of about 15 mW causes a decrease of the tank circuit Q-value because of charge pair creation. Compensation for the change of the element parameter was very effective, and tuning ranges of 225 and 253 MHz have been obtained for the one-pole and the two-pole filters, respectively.<>
Keywords :
active filters; band-pass filters; laser beam applications; microwave filters; tuning; 225 MHz; 253 MHz; MESFETs; charge pair creation; gate-to-source capacitance; laser irradiance; microwave active band-pass filter; one-pole filter; tank circuit Q-value; tuning; two-pole filters; Band pass filters; Capacitance; Capacitors; Circuit optimization; Laser tuning; MESFETs; Optical control; Optical tuning; Semiconductor lasers; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147088
