DocumentCode
3551375
Title
Low-power bandgap references featuring DTMOSTs
Author
Annema, Anne-Johan
Author_Institution
Philips Research Laboratories, Eindhoven, Netherlands
fYear
1998
fDate
22-24 Sept. 1998
Firstpage
116
Lastpage
119
Abstract
This paper describes two CMOS bandgap-reference circuits featuring Dynamic-Threshold MOS transistors. The first bandgap reference circuit aims at application in low-voltage low-power ICs that tolerate medium accuracy. The circuit´s accuracy is 2% and it runs at supply voltages down to 0.85V while consuming only 1.2µW; the die area is 0.063mm2in a 0.35µm CMOS process. The second bandgap reference circuit aims at high accuracy operation (0.3%) without trimming. It consumes approximately 5.4µW from a 1.8V supply voltage, and occupies 0.06mm2in a 0.35µm CMOS process.
Keywords
CMOS integrated circuits; CMOS process; Diodes; Laboratories; MOSFETs; Photonic band gap; Resistors; Temperature dependence; Temperature distribution; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European
Type
conf
DOI
10.1109/ESSCIR.1998.186222
Filename
1470979
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