• DocumentCode
    3551375
  • Title

    Low-power bandgap references featuring DTMOSTs

  • Author

    Annema, Anne-Johan

  • Author_Institution
    Philips Research Laboratories, Eindhoven, Netherlands
  • fYear
    1998
  • fDate
    22-24 Sept. 1998
  • Firstpage
    116
  • Lastpage
    119
  • Abstract
    This paper describes two CMOS bandgap-reference circuits featuring Dynamic-Threshold MOS transistors. The first bandgap reference circuit aims at application in low-voltage low-power ICs that tolerate medium accuracy. The circuit´s accuracy is 2% and it runs at supply voltages down to 0.85V while consuming only 1.2µW; the die area is 0.063mm2in a 0.35µm CMOS process. The second bandgap reference circuit aims at high accuracy operation (0.3%) without trimming. It consumes approximately 5.4µW from a 1.8V supply voltage, and occupies 0.06mm2in a 0.35µm CMOS process.
  • Keywords
    CMOS integrated circuits; CMOS process; Diodes; Laboratories; MOSFETs; Photonic band gap; Resistors; Temperature dependence; Temperature distribution; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European
  • Type

    conf

  • DOI
    10.1109/ESSCIR.1998.186222
  • Filename
    1470979