Title :
Enhancement-mode pseudomorphic inverted HEMT for low noise amplifier
Author :
Ohmuro, K. ; Fujishiro, H.I. ; Itoh, M. ; Nakamura, H. ; Nishi, S.
Author_Institution :
Oki Elect. Ind. Co. Ltd., Tokyo, Japan
Abstract :
The noise characteristics of pseudomorphic inverted high electron mobility transistors (P-I-HEMTs) are reported. The P-I-HEMTs were fabricated in enhancement-mode. Compared with the pseudomorphic HEMT, the P-I-HEMT shows a lower noise figure, especially at small drain voltage and small drain current. It is concluded that the P-I-HEMT structure is suitable for fine gate low-noise FETs.<>
Keywords :
electron device noise; high electron mobility transistors; solid-state microwave devices; enhancement-mode; high electron mobility transistors; low noise amplifier; noise characteristics; pseudomorphic inverted HEMT; Carrier confinement; Dry etching; Electrodes; FETs; HEMTs; Low-noise amplifiers; PHEMTs; Semiconductor device noise; Voltage; Wet etching;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147102
