An AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) for X- and Ku-band power applications

Author

Huang, J.C. ; Jackson, G. ; Shanfield, S. ; Hoke, W. ; Lyman, P. ; Atwood, D. ; Saledas, P. ; Schindler, M. ; Tajima, Y. ; Platzker, A. ; Masse, D. ; Statz, H.

Author_Institution

Raytheon Co., Lexington, MA, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

713

Abstract

A PHEMT with record-high output power, gain and power-added efficiency at 10 and 18 GHz has been achieved due to the use of a novel method to improve the gate-drain reverse breakdown voltage. A critical surface problem was uncovered and resolved. Silicon nitride was deposited as surface passivation. The results of this work suggest that, in addition to superior low-noise performance, the PHEMT is also very promising for high-performance, power amplications in the X- to Ku-band frequency range.<>

Keywords

III-V semiconductors; aluminium compounds; electric breakdown of solids; high electron mobility transistors; indium compounds; power transistors; solid-state microwave devices; 10 to 18 GHz; AlGaAs-InGaAs; Ku-band; SHF; Si/sub 3/N/sub 4/; X-band; gate-drain reverse breakdown voltage; high electron mobility transistor; low-noise performance; power applications; pseudomorphic HEMT; surface passivation; Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; MESFETs; MODFETs; PHEMTs; Passivation; Power generation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147103

Filename

147103