Title :
AlInAs/GaInAs on InP HEMT low noise MMIC amplifiers
Author :
Rosenbaum, S.E. ; Litvin, K. ; Chou, C.S. ; Larson, L.E. ; Nguyen, L.D. ; Ngo, C. ; Lui, M. ; Henige, J. ; Thompson, M.A. ; Mishra, U. ; Pierson, D.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
Abstract :
AlInAs/GaInAs on InP HEMT (high electron mobility transistor) single-stage low-noise MMIC (monolithic microwave integrated circuit) amplifiers have been developed for operation at 12 GHz, 35 GHz and 60 GHz. A noise figure of 0.78 dB with an associated gain of 15 dB was achieved at 12 GHz. This is the lowest noise figure yet reported for a monolithic amplifier at 12 GHz. A noise figure of 1.2 dB with gain greater than 12 dB was obtained from 10 to 14 GHz. At 35.5 GHz, 13 dB gain with 17 dB input return loss was obtained. At 55 GHz, 8 dB gain with more than 12 dB input return loss was obtained.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; microwave amplifiers; 0.78 dB; 1.2 dB; 10 to 14 GHz; 12 GHz; 12 dB; 13 dB; 15 dB; 17 dB; 35 GHz; 55 GHz; 60 GHz; 8 dB; AlInAs-GaInAs-InP; HEMT; InP; gain; input return loss; low noise MMIC amplifiers; noise figure; Gain; HEMTs; Indium phosphide; Integrated circuit noise; Low-noise amplifiers; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits; Noise figure;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147131
