AlInAs/GaInAs on InP HEMT low noise MMIC amplifiers

Author

Rosenbaum, S.E. ; Litvin, K. ; Chou, C.S. ; Larson, L.E. ; Nguyen, L.D. ; Ngo, C. ; Lui, M. ; Henige, J. ; Thompson, M.A. ; Mishra, U. ; Pierson, D.

Author_Institution

Hughes Res. Lab., Malibu, CA, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

815

Abstract

AlInAs/GaInAs on InP HEMT (high electron mobility transistor) single-stage low-noise MMIC (monolithic microwave integrated circuit) amplifiers have been developed for operation at 12 GHz, 35 GHz and 60 GHz. A noise figure of 0.78 dB with an associated gain of 15 dB was achieved at 12 GHz. This is the lowest noise figure yet reported for a monolithic amplifier at 12 GHz. A noise figure of 1.2 dB with gain greater than 12 dB was obtained from 10 to 14 GHz. At 35.5 GHz, 13 dB gain with 17 dB input return loss was obtained. At 55 GHz, 8 dB gain with more than 12 dB input return loss was obtained.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; microwave amplifiers; 0.78 dB; 1.2 dB; 10 to 14 GHz; 12 GHz; 12 dB; 13 dB; 15 dB; 17 dB; 35 GHz; 55 GHz; 60 GHz; 8 dB; AlInAs-GaInAs-InP; HEMT; InP; gain; input return loss; low noise MMIC amplifiers; noise figure; Gain; HEMTs; Indium phosphide; Integrated circuit noise; Low-noise amplifiers; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits; Noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147131

Filename

147131