A subharmonically pumped resistive dual-HEMT-mixer

Author

Zirath, H.

Author_Institution

Dept. of Appl. Electron. Phys., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

1991

fDate

10-14 July 1991

Firstpage

875

Abstract

A novel subharmonically pumped high electron mobility transistor (HEMT)-based resistive mixer is described. The mixer is based on a paralleled HEMT-configuration where the LO (local oscillator) is applied to the gates with the same amplitude but with opposite phase. A mixer prototype was constructed at X-band. A conversion loss of 6.5 dB was measured at an LO-power level of 12 dB/sub m/. A high LO-IF (intermediate frequency) and LO-RF isolation is obtained intrinsically due to LO-cancellation. HEMT-devices were fabricated and characterized, and a nonlinear device model was developed and used in harmonic balance simulations.<>

Keywords

high electron mobility transistors; mixers (circuits); solid-state microwave circuits; 10 to 12 GHz; 6.5 dB; LO-IF isolation; LO-RF isolation; LO-power level; X-band; conversion loss; harmonic balance simulations; nonlinear device model; paralleled HEMT-configuration; subharmonically pumped resistive dual-HEMT-mixer; Equivalent circuits; Gold; HEMTs; Molecular beam epitaxial growth; Pulse measurements; Radio frequency; Scanning probe microscopy; Schottky diodes; Semiconductor diodes; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147147

Filename

147147