Improved millimeter-wave mixer performance analysis using a drift diffusion capacitance model

Author

Mehdi, I. ; Siegel, P.H. ; East, J.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

887

Abstract

The capacitance-voltage characteristics of a Schottky diode as derived from Poisson´s equation predicts erroneously high values of capacitance for large forward bias. The use of this capacitance model predicts temperature-dependent mixer noise-performance in contradiction with experimentally measured trends. It is shown that by using a drift-diffusion model for the diode capacitance the computed mixer performance is in better agreement with experiments. The need for better diode models to accurately predict high-frequency temperature-dependent mixer noise performance is also emphasized.<>

Keywords

Schottky-barrier diodes; capacitance; mixers (circuits); semiconductor device models; solid-state microwave devices; Schottky diode; capacitance-voltage characteristics; diode models; drift diffusion capacitance model; high frequency temperature dependent noise; millimeter-wave mixer performance analysis; Acoustical engineering; Capacitance; Millimeter wave technology; Performance analysis; Predictive models; Schottky diodes; Space technology; Submillimeter wave technology; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147150

Filename

147150