Nearly dispersionless microstrip for 100 GHz pulses utilizing a buried silicide groundplane

Author

Goossen, K.W. ; Roskos, H. ; Nuss, M.C. ; Kisker, D.W. ; Tell, B. ; White, A.E. ; Short, K.T. ; Jacobson, D.C. ; Poate, J.M.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

1053

Abstract

Measurements of pulse propagation on microstrip lines on silicon that use a buried highly conducting CoSi/sub 2/ groundplane are presented. These lines show significant reductions in dispersion compared to lines using a standard groundplane on the back of the substrate, due to the much smaller conductor separation. Rise times of 100 GHz pulses increase only from 2.5 ps to 3.7 ps on the buried groundplane microstrip after 5 mm propagation, compared to 2.7 ps to 11.3 ps on a conventional microstrip. The CoSi/sub 2/ layer is formed by an ion-implant and alloy technique that results in a crystalline silicon overlayer allowing device fabrication.<>

Keywords

dispersion (wave); strip lines; 100 GHz; 2.5 to 11.3 ps; CoSi/sub 2/-Si; alloy technique; buried silicide groundplane; crystalline Si overlayer; dispersion reduction; ion-implant; microstrip; pulse propagation; Conductors; Crystallization; Cutoff frequency; Fabrication; Microstrip; Microwave propagation; Pulse measurements; Silicides; Silicon; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147194

Filename

147194