DocumentCode :
3551507
Title :
Vacuum-baking encapsulation techniques and improved reliability of NPN alloy transistors
Author :
Burcham, N.P. ; Miller, Paul
Author_Institution :
Bell Telephone Laboratories
fYear :
1955
fDate :
24-25 Oct. 1955
Firstpage :
13
Lastpage :
14
Abstract :
Other investigators have reported that improved reliability for NPN alloy transistors can be expected with vacuum baking and vacuum encapsulation of the device. Our pilot shop experience with relatively large numbers of NPN alloy transistors has demonstrated that vacuum encapsulation does offer definite gains in reliability over earlier methods for encapsulation. An extension of this encapsulation technique involving employing a gettering agent results in further improvement in the stability of the device characteristics with time. Feasibility of use of these encapsulation procedures in high level production has been achieved through design of the high-vacuum station and the procedures associated with its operation. Details of the equipment and process and plots of transistor parameters versus time will be presented.
Keywords :
Encapsulation; Gettering; Laboratories; Production; Stability; Telephony; Vacuum technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1955 International
Conference_Location :
Washington, DC, USA
Type :
conf
DOI :
10.1109/IEDM.1955.186918
Filename :
1471965
Link To Document :
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