Abstract :
The general mechanical details as well as the electrical properties of the 2N66 power alloy transistor are presented. Flat and planar junctions, which are being produced on and oriented germanium, are primarily attributed to alloy fixture design, alloying cycle, and crystal orientation. The design of the alloying fixture permits "one-shot" alloying and insures close control of collector capacitance, current amplification ratio, and frequency cut-off. Both collector and emitter electrodes are alloyed under pressure which aids substantially in producing uniform wetting during the alloying process. Assembled units are being etched with a superoxol-hydrofluoric acid-hydrochloric acid etch which produces good junction characteristics. Reliability studies indicate that reasonable aging trends result if the units are encapsulated in a dry air ambient.
