DocumentCode
3551574
Title
Design theory and exploratory development of the depletion layer transistor
Author
Gartner, W. ; Brand, F.A. ; Matthei, W.
Volume
2
fYear
1956
fDate
1956
Firstpage
13
Lastpage
14
Abstract
The design theory of the Depletion Layer Transistor, which was first announced at WESCON, 1956, is outlined in all its major phases. The schematic models on which the analysis is based are presented, and the fundamental equations, which describe the carrier transport through the proposed structures, are formulated. Among the results to be discussed are expressions for available gain and an analysis of the stability problem. The theory is extended to describe operation at frequencies equal to or exceeding the reciprocal transit time of carriers through the structure.
Keywords
Capacitance; Diodes; Frequency; Gain measurement; Germanium; Impurities; Laboratories; Power measurement; UHF measurements; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1956 International
Type
conf
DOI
10.1109/IEDM.1956.186973
Filename
1472119
Link To Document