FET noise model and on-wafer measurement of noise parameters

Author

Pospieszalski, M.W. ; Niedzwiecki, A.C.

Author_Institution

Nat. Radio Astron. Obs., Charlottesville, VA, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

1117

Abstract

A noise model of a microwave FET (M.W. Pospieszalski 1988, 1989) is verified with on-wafer S-parameters and noise parameter measurement data. An excellent agreement between the model prediction and measurement results is obtained for a wide range of FET bias. It is shown that the equivalent drain temperature is a very strong function of the drain current, while the equivalent gate temperature is a very weak function of the drain current and, within the measurement error, it is equal to the ambient temperature for small drain current.<>

Keywords

S-parameters; electric noise measurement; electron device noise; equivalent circuits; field effect transistors; microwave measurement; semiconductor device models; semiconductor device testing; solid-state microwave devices; FET noise model; drain current; equivalent drain temperature; equivalent gate temperature; microwave FET; noise parameters; on-wafer measurement; onwafer S-parameter data; Circuit noise; Equivalent circuits; Extraterrestrial measurements; Frequency; Microwave FETs; Noise measurement; Observatories; Radio astronomy; Scattering parameters; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147212

Filename

147212