Title :
FET noise model and on-wafer measurement of noise parameters
Author :
Pospieszalski, M.W. ; Niedzwiecki, A.C.
Author_Institution :
Nat. Radio Astron. Obs., Charlottesville, VA, USA
Abstract :
A noise model of a microwave FET (M.W. Pospieszalski 1988, 1989) is verified with on-wafer S-parameters and noise parameter measurement data. An excellent agreement between the model prediction and measurement results is obtained for a wide range of FET bias. It is shown that the equivalent drain temperature is a very strong function of the drain current, while the equivalent gate temperature is a very weak function of the drain current and, within the measurement error, it is equal to the ambient temperature for small drain current.<>
Keywords :
S-parameters; electric noise measurement; electron device noise; equivalent circuits; field effect transistors; microwave measurement; semiconductor device models; semiconductor device testing; solid-state microwave devices; FET noise model; drain current; equivalent drain temperature; equivalent gate temperature; microwave FET; noise parameters; on-wafer measurement; onwafer S-parameter data; Circuit noise; Equivalent circuits; Extraterrestrial measurements; Frequency; Microwave FETs; Noise measurement; Observatories; Radio astronomy; Scattering parameters; Temperature;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147212
