DocumentCode :
3551592
Title :
A barium titanate crystal memory device
Author :
Kennedy, E.D.
Volume :
2
fYear :
1956
fDate :
1956
Firstpage :
24
Lastpage :
24
Abstract :
The ferroeleetrie phenomenon is described and compared with ferromagnetic behavior. The crystal lattice structure of barium titanate is described, and the tetragonal phase accounts for the ferroelectric behavior. Terms to be used in describing ferroeleetric characteristics are defined. The method of growing barium titanate crystals in a potassium fluoride melt is described briefly. The fabrication of the crystal unit is described, including the mounting in a container similar to that used for transistors. A series of standard sizes of crystal units is proposed.
Keywords :
Barium; Chemicals; Circuit testing; Containers; Crystals; Ferroelectric materials; Lattices; Signal to noise ratio; Titanium compounds; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1956 International
Type :
conf
DOI :
10.1109/IEDM.1956.186989
Filename :
1472135
Link To Document :
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