DocumentCode
3551593
Title
Economical diffused junction silicon varistors
Author
Smith, K.D.
Volume
2
fYear
1956
fDate
1956
Firstpage
24
Lastpage
24
Abstract
Useful junction diodes in certain performance ranges may be fabricated from low grade silicon material by diffusion in non-critical environments. The devices thus made, whiIe not as versatile as those obtained when the most careful attention is given to purity of material and process, show promise of several fields of application in the lower voltage ranges. Representative diffusion processes are discussed, and results using several silicon material sources are considered.
Keywords
Silicon; Varistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1956 International
Type
conf
DOI
10.1109/IEDM.1956.186990
Filename
1472136
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