DocumentCode
3551616
Title
Medium-power high-speed PNP and NPN germanium alloy transistors
Author
Hughes, H.E. ; Robillard, T.R. ; Westberg, R.W.
Volume
2
fYear
1956
fDate
1956
Firstpage
36
Lastpage
36
Abstract
A Bell System application requires a complementary pair of medium power, high speed switching transistors which, among other requirements, must show an alpha cut-off frequency of greater than four megacycles/second and electrical punch-through voltage of twenty-five volts minimum. Units have been designed and produced which exhibit median values of these parameters of seven megacycles/second and seventy volts, respectively. High yields have been achieved on established production lines by very close manufacturing controls of the critical alloying variables, namely: germanium wafer thickness, alloyed junction area, concentricity, mass of alloying material, alloying temperature, and special material properties such as orientation and etch-pit density. The precision gauging and jigging methods which were developed in conjunction with the Western Electric Company and results obtained will be presented.
Keywords
Alloying; Cutoff frequency; Electric variables control; Germanium alloys; Manufacturing; Mass production; Temperature control; Thickness control; Voltage; Weight control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1956 International
Type
conf
DOI
10.1109/IEDM.1956.187011
Filename
1472157
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