• DocumentCode
    3551616
  • Title

    Medium-power high-speed PNP and NPN germanium alloy transistors

  • Author

    Hughes, H.E. ; Robillard, T.R. ; Westberg, R.W.

  • Volume
    2
  • fYear
    1956
  • fDate
    1956
  • Firstpage
    36
  • Lastpage
    36
  • Abstract
    A Bell System application requires a complementary pair of medium power, high speed switching transistors which, among other requirements, must show an alpha cut-off frequency of greater than four megacycles/second and electrical punch-through voltage of twenty-five volts minimum. Units have been designed and produced which exhibit median values of these parameters of seven megacycles/second and seventy volts, respectively. High yields have been achieved on established production lines by very close manufacturing controls of the critical alloying variables, namely: germanium wafer thickness, alloyed junction area, concentricity, mass of alloying material, alloying temperature, and special material properties such as orientation and etch-pit density. The precision gauging and jigging methods which were developed in conjunction with the Western Electric Company and results obtained will be presented.
  • Keywords
    Alloying; Cutoff frequency; Electric variables control; Germanium alloys; Manufacturing; Mass production; Temperature control; Thickness control; Voltage; Weight control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1956 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1956.187011
  • Filename
    1472157