DocumentCode :
3551637
Title :
High peak power dielectric resonator oscillator combiner
Author :
Sigmon, B.E.
Author_Institution :
Motorola Gov. Electron. Group, Scottsdale, AZ, USA
fYear :
1991
fDate :
10-14 July 1991
Firstpage :
1171
Abstract :
The author describes an approach that achieves significant amounts of peak power from an oscillator, dielectrically stabilized, and power combined, in one stage. The active elements used were stacked Gunn diodes operating in X- and Ku-bands. 40 W and 112 W of peak power were measured from two-diode and four-diode DRO/combiners respectively, operating in X-band (9.3 GHz), and 13.5 W of peak power was measured from a two-diode DRO/combiner in Ku-band (16.3 GHz). The approach presented makes possible the production of sources with fewer active devices, and reduces the number of circulators and isolators needed to achieve the same amount of output power (versus the conventional approach of using a low-level DRO followed by a cascade of amplifier/power combiner stages).<>
Keywords :
Gunn oscillators; dielectric resonators; stability; 112 W; 13.5 W; 16.3 GHz; 40 W; 9.3 GHz; DRO combiner; X-band; dielectric resonator oscillator; dielectrically stabilized; four-diode type; stacked Gunn diodes; two-diode type; Circulators; Dielectric measurements; Diodes; Gunn devices; Isolators; Oscillators; Power amplifiers; Power generation; Power measurement; Production;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
ISSN :
0149-645X
Print_ISBN :
0-87942-591-1
Type :
conf
DOI :
10.1109/MWSYM.1991.147227
Filename :
147227
Link To Document :
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