Title :
A better biasing technique for IMPATT diodes
Author_Institution :
Hughes Aircraft Co., Canoga Park, CA, USA
Abstract :
A novel biasing technique is introduced which increases power, bandwidth, and reliability in IMPATT circuits while also eliminating thermal runaway and reducing cold startup times, all done with simpler biasing electronics than before. RF combiner performance is also improved, due to reduced sensitivity to diode mismatch.<>
Keywords :
IMPATT diodes; circuit reliability; solid-state microwave circuits; IMPATT circuits; IMPATT diodes; RF combiner performance; bandwidth improvement; biasing technique; power improvement; reliability; Aerospace electronics; Bandwidth; Circuits; Diodes; Impedance; Injection-locked oscillators; Power generation; Radio frequency; Temperature distribution; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-87942-591-1
DOI :
10.1109/MWSYM.1991.147232