DocumentCode :
3551667
Title :
A better biasing technique for IMPATT diodes
Author :
Eisenhart, R.L.
Author_Institution :
Hughes Aircraft Co., Canoga Park, CA, USA
fYear :
1991
fDate :
10-14 July 1991
Firstpage :
1191
Abstract :
A novel biasing technique is introduced which increases power, bandwidth, and reliability in IMPATT circuits while also eliminating thermal runaway and reducing cold startup times, all done with simpler biasing electronics than before. RF combiner performance is also improved, due to reduced sensitivity to diode mismatch.<>
Keywords :
IMPATT diodes; circuit reliability; solid-state microwave circuits; IMPATT circuits; IMPATT diodes; RF combiner performance; bandwidth improvement; biasing technique; power improvement; reliability; Aerospace electronics; Bandwidth; Circuits; Diodes; Impedance; Injection-locked oscillators; Power generation; Radio frequency; Temperature distribution; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1991., IEEE MTT-S International
Conference_Location :
Boston, MA, USA
ISSN :
0149-645X
Print_ISBN :
0-87942-591-1
Type :
conf
DOI :
10.1109/MWSYM.1991.147232
Filename :
147232
Link To Document :
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