Title :
Four-layer silicon diodes
Author :
Fok, S.M. ; Horsley, G.S. ; Sah, C.T. ; Sello, H.
Abstract :
This paper describes some developmental four-layer silicon diodes which have switching voltages of 20-70 volts and holding currents of less than 1 ma to 100 ma. The speed of these devices is in the microsecond range. Temperature variation of these parameters is discussed. Some problems of design and fabrication techniques which control the electrical characteristics of these devices are presented.
Keywords :
Doping; Electric variables; Electrons; Etching; Fabrication; Lapping; Packaging; Semiconductor devices; Semiconductor diodes; Silicon;
Conference_Titel :
Electron Devices Meeting, 1957 International
DOI :
10.1109/IEDM.1957.187058
