DocumentCode
3551677
Title
Four-layer silicon diodes
Author
Fok, S.M. ; Horsley, G.S. ; Sah, C.T. ; Sello, H.
Volume
3
fYear
1957
fDate
1957
Firstpage
114
Lastpage
114
Abstract
This paper describes some developmental four-layer silicon diodes which have switching voltages of 20-70 volts and holding currents of less than 1 ma to 100 ma. The speed of these devices is in the microsecond range. Temperature variation of these parameters is discussed. Some problems of design and fabrication techniques which control the electrical characteristics of these devices are presented.
Keywords
Doping; Electric variables; Electrons; Etching; Fabrication; Lapping; Packaging; Semiconductor devices; Semiconductor diodes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1957 International
Type
conf
DOI
10.1109/IEDM.1957.187058
Filename
1472329
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