S-parameter measurements and applications of superconducting flux flow transistors

Author

Martens, J.S. ; Hietala, V.M. ; Zipperian, T.E. ; Ginley, D.S. ; Tigges, C.P. ; Phillips, J.M.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

1231

Abstract

Microwave two-port S-parameter measurements and modeling were performed on superconducting flux flow transistors. These transistors, based on the magnetic control of flux flow in an array of high-temperature superconducting weak links, can exhibit significant available power gain at microwave frequencies (over 20 dB at 7-10 GHz in some devices). The input impedance is largely inductive, while the output impedance is resistive and inductive. These devices are potentially useful in numerous applications, including matched amplifiers.<>

Keywords

S-parameters; high-temperature superconductors; microwave amplifiers; modelling; solid-state microwave devices; superconducting junction devices; transistors; 20 dB; 7 to 10 GHz; high temperature superconductors; high-temperature superconducting weak links; input impedance; magnetic control of flux flow; matched amplifiers; microwave frequencies; modeling; output impedance; power gain; superconducting flux flow transistors; two-port S-parameter measurements; Fluid flow measurement; High temperature superconductors; Impedance; Magnetic devices; Magnetic flux; Microwave measurements; Microwave transistors; Performance evaluation; Scattering parameters; Superconducting microwave devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147243

Filename

147243