A layered negative resistance amplifier and oscillator using a FET and a slot antenna

Author

Kawasaki, S. ; Itoh, T.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

fYear

1991

fDate

10-14 July 1991

Firstpage

1261

Abstract

Prototypes of quasi-optical transmitter components (an oscillator and an amplifier) using FETs as one-port devices are reported. By using a lost antenna and microstrip-to-slotline transition, the circuit portion and the antenna are separated on different interfaces. About 1% tuning range (100 MHz around 9.4 GHz) of the oscillation frequency on the negative resistance oscillator and about 2% locking range (200 MHz around 9.3 GHz) of locking frequency on the negative resistance amplifier were obtained by controlling applied DC voltages. The radiation patterns are reported.<>

Keywords

MMIC; Schottky gate field effect transistors; active antennas; field effect integrated circuits; microwave amplifiers; microwave oscillators; waveguide antennas; 200 MHz; 9.3 to 9.4 GHz; FETs; MESFET; MMIC; layered negative resistance amplifier; locking range; microstrip-to-slotline transition; negative resistance oscillator; one-port devices; oscillation frequency; quasi-optical transmitter components; radiation patterns; slot antenna; tuning range; Antenna radiation patterns; Circuit optimization; FETs; Frequency; Microstrip antennas; Prototypes; Transmitters; Tuning; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1991., IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-87942-591-1

Type

conf

DOI

10.1109/MWSYM.1991.147251

Filename

147251