Gallium-arsenide high temperature diodes

This paper presents solutions to some of the problems encountered in the fabrication of high-temperature junction diodes from gallium arsenide and indium phosphide. The physical problems peculiar to these compound semiconductors are reviewed, including diffusion techniques, surface characteristics, contacting techniques, and methods for mounting and encapsulation for high-temperature operation. Typical cross-section areas of junctions on both materials are shown, and etching and staining techniques are discussed. A summary is given of the electrical characteristics of alloyed, plated, and evaporated contacts on n-and p-type samples. The electrical characteristics of diffused diodes are given for operation at room temperature and at 300 degrees centigrade with reverse breakdowns of 100 volts and forward currents of one-half ampere.