DocumentCode :
3551767
Title :
Microwave germanium transistor
Author :
Davis, R.E. ; Bittmann, C.A. ; Gnaedinger, R.J.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, New Jersey
Volume :
5
fYear :
1959
fDate :
1959
Firstpage :
46
Lastpage :
46
Abstract :
A diffused base, alloyed emitter, mesa, PNP germanium transistor has been developed for application as an oscillator or amplifier at 3 kmc, or for use in feedback amplifiers requiring 500 mc bandwidth. The transistor employs a base width of 1/4 micron and a mesa size of .002 . The emitter and two base stripes are each .0003 . The transistor employs a coaxial encapsulation designed to electrically match 50Ω coaxial line. The .0003" thick wafer is gold bonded to the inner conductor of the output line section. The emitter stripe is connected to an internal shield integral with the encapsulation shell by means of a compression bonded .0002" gold wire. The base stripes are connected to the center conductor of the input line by a similar .0002" gold wire. The input and output impedances of the transistor are designed to match 50Ω. Electrical results will be discussed.
Keywords :
Coaxial components; Conductors; Encapsulation; Feedback amplifiers; Germanium alloys; Gold; Microwave oscillators; Microwave transistors; Wafer bonding; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1959 International
Type :
conf
DOI :
10.1109/IEDM.1959.187117
Filename :
1472656
Link To Document :
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