Comparative study of stimulated emission in GaN, Al/sub x/Ga/sub 1-x/N, and In/sub x/Ga/sub 1-x/N

Author

Wiesmann, Dorothea ; Brener, Igal ; Khan, Muhammad Asad

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1996

fDate

2-7 June 1996

Firstpage

455

Lastpage

456

Abstract

Summary form only given. GaN and related alloys InGaN and AlGaN are very promising materials for the realization of a laser diode emitting in the blue to near-UV spectral range. The high quantum efficiency of the LED produced by Nichia Chemical Ind. with an InGaN active layer draws a special interest on that alloy. We have measured the stimulated emission for different InGaN samples and compared the determined threshold with those for GaN and AlGaN samples. The samples were grown by a MOCVD system.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; optical films; photoluminescence; semiconductor growth; semiconductor lasers; stimulated emission; ultraviolet spectra; vapour phase epitaxial growth; visible spectra; Al/sub x/Ga/sub 1-x/N; AlGaN; GaN; In/sub x/Ga/sub 1-x/N; InGaN; InGaN active layer; LED; MOCVD; Nichia Chemical Ind.; high quantum efficiency; laser diode; near-UV spectral range; related alloys; stimulated emission; Aging; Aluminum gallium nitride; Degradation; Diode lasers; Gallium nitride; Laser excitation; Light emitting diodes; Photoluminescence; Solids; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864918