Microscopic theory of gain in a group-III nitride stained quantum well laser

Summary form only given. The study of gain properties in group-III nitride quantum wells such as InGaN-GaN is complicated by the incomplete knowledge of band structure properties, and the need for a consistent treatment of strong many-body Coulomb effects. This paper describes an approach that involves a first-principles bandstructure calculation, the results of which are incorporated into a microscopic laser theory. The bandstructure calculation applies a density-functional method based on ab initio pseudopotentials and planewave expansions. This method provides a single analytical model for computing the group-III nitride material properties, thus ensuring consistency in the values for the different bandstructure parameters.