Electrical properties and thermal stability of semi-insulating InP crystals with different iron content

Author

Fornari, R. ; Curti, M. ; Mignoni, G.

Author_Institution

MASPEC-CNR Inst., Parma, Italy

fYear

1991

fDate

8-11 Apr 1991

Firstpage

12

Lastpage

15

Abstract

Results of electrical measurements carried out on different InP:Fe crystals are discussed. The Hall mobility of high-resistivity Fe-doped InP wafers is shown to vary over a wide range. On the basis of their mobility, the high-resistivity samples are classified into three groups. The results of electrical measurements on annealed InP and the correlation between the electrical characteristics of as-grown and annealed InP are also discussed. Semi-insulating InP is shown to exhibit different compensation regimes and electrical characteristics, according to the concentration of Fe incorporated and residual shallow levels. It is also shown that as-grown InP, with a compensation ratio N _FE/(N_d-N_a) in the 1.2 to 2.5 range, has the highest mobility and resistivity. An acceptable thermal stability is found in samples where N_Fe> N_d>N_a

Keywords

Hall effect; III-V semiconductors; annealing; charge compensation; electrical conductivity of crystalline semiconductors and insulators; impurity electron states; indium compounds; iron; 295 to 440 K; Hall mobility; III-V semiconductor; InP:Fe crystals; annealed; as-grown; compensation regimes; dopant content influence; electrical characteristics; high-resistivity samples; residual shallow levels; semi-insulating; thermal stability; Conductivity; Crystals; Electric variables measurement; Energy measurement; Hall effect; Indium phosphide; Iron; Temperature distribution; Temperature measurement; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147284

Filename

147284