Real-index-guided 630-nm-band AlGaInP laser diode with AlInP current blocking layer

Author

Uetani, T. ; Hiroyama, R. ; Shono, M. ; Ibaraki, A. ; Yodoshi, K. ; Niina, T.

Author_Institution

Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan

fYear

1996

fDate

2-7 June 1996

Firstpage

458

Lastpage

459

Abstract

Summary form only given. In this paper, we believe we report a real-index-guided 630-nm-band AlGaInP laser diode with AlInP current blocking layer for the first time. The schematic structure is shown. The device has a buried-ridge stripe structure with AlInP current blocking layer, which is transparent for the wavelength of the 630-nm-band and has a smaller refractive index than that of the AlGaInP cladding layer. The active layer is the strain-compensated multiple quantum well structure with tensile strained quantum wells and compressively strained barriers.

Keywords

III-V semiconductors; aluminium compounds; claddings; gallium compounds; indium compounds; optical films; quantum well lasers; refractive index; ridge waveguides; semiconductor thin films; waveguide lasers; AlGaInP; AlGaInP cladding layer; AlInP; AlInP current blocking layer; active layer; buried-ridge stripe structure; compressively strained barriers; real-index-guided 630-nm-band AlGaInP laser diode; refractive index; schematic structure; strain-compensated multiple quantum well lasers; tensile strained quantum wells; transparent; Diode lasers; Laser modes; Laser theory; Leakage current; Optical pumping; Quantum well lasers; Radiative recombination; Solid lasers; Surface emitting lasers; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-443-2

Type

conf

Filename

864922