Annealing and bulk crystal growth of undoped InP under controlled P-pressure: a perspective for the preparation of undoped SI InP?

Author

Hirt, G. ; Hofmann, D. ; Mosel, F. ; Schäfer, N. ; Müller, G.

Author_Institution

Inst. fur Werkstoffwissenschaften, Erlangen-Nurnberg Univ., Germany

fYear

1991

fDate

8-11 Apr 1991

Firstpage

16

Lastpage

19

Abstract

Nominally undoped semi-insulating InP is prepared reproducibly. The electrical properties of a large series of undoped InP samples, before and after annealing under controlled phosphorus pressure, are presented. Spectroscopic investigations show that iron is incorporated during annealing, but native defects have to be taken into consideration in order to explain the electrical data. Based on a survey of intrinsic defects in InP and on PL measurements of crystals with different stoichiometries, a perspective is given for the growth of undoped semi-insulating InP under controlled phosphorus pressure

Keywords

III-V semiconductors; annealing; crystal growth from melt; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor growth; III-V semiconductor; annealing; bulk crystal growth; controlled pressure LEC growth; electrical properties; intrinsic defects; native defects; photoluminescence; semi-insulating; undoped InP; Annealing; Conductivity; Electromagnetic wave absorption; Impurities; Indium phosphide; Infrared spectra; Iron; Mass spectroscopy; Pressure control; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147285

Filename

147285