Title :
Progress in InP-based solar cells
Author :
Coutts, T.J. ; Wanlass, M.W. ; Gessert, T.A. ; Li, X. ; Ward, J.S.
Author_Institution :
Solar Energy Res. Inst., Golden, CO, USA
Abstract :
Progress in the development of solar cells based on InP and its lower-energy-gap, lattice-matched family of GaxIn1-x AsyP1-y alloys is reviewed. The applications and performance of indium tin oxide (ITO)InP cells, monolithic tandem cells based on InP/Ga0.47In0.53As, mechanically stacked cells using GaAs/Ga0.25In0.75As0.54 P0.46, and InP shallow-homojunction cells grown heteroepitaxially on lower-cost substrates are described. It is concluded that ITO/InP cells have reached a satisfactory efficiency level for 1-sun cells and are competitive with diffused-junction cells; mechanically stacked tandem concentrator cells have reached efficiencies that make them competitive with all other solar cells; monolithically grown tandem concentrator cells for space applications have the potential for significant improvements in efficiency; and heteroepitaxially grown InP homojunction cells hold considerable potential for space applications
Keywords :
III-V semiconductors; indium compounds; reviews; solar cells; GaxIn1-xAsyP1-y alloys; GaAs-Ga0.25In0.75As0.54P 0.46; III-V semiconductors; ITO-InP solar cells; InP based solar cells; InP-Ga0.47In0.53As tanden cells; InSnO-InP; efficiency; heteroepitaxially grown; mechanically stacked cells; performance; shallow-homojunction cells; space applications; Costs; Gallium arsenide; Indium phosphide; Indium tin oxide; Photovoltaic cells; Photovoltaic systems; Solar energy; Solar power generation; Space technology; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147286
