Title :
Processing- and radiation-produced defects in InP solar cells
Author :
Drevinsky, P.J. ; Caefer, C.E. ; Keavney, C.J.
Author_Institution :
Rome Lab.. Hanscom AFB, MA, USA
Abstract :
The detection and characterization of processing- and radiation-induced defects in p-type InP using deep level transient spectroscopy (DLTS) are described. Annealing effects are discussed and initial recovery of critical cell parameters is correlated with anneal of dominant defects. It is shown that DLTS spectra differ for implanted and epitaxial junctions. The implanted diodes do not show the H4 (0.38 eV) level, casting doubt on the Frenkel pair, Vp-Pi, identity assignment. Carrier loss and degradation of Voc, Isc, and cell efficiency correlate with the production of dominant hole traps H4 and H3. Observed recovery correlates with anneal of H4 and H3
Keywords :
III-V semiconductors; annealing; deep level transient spectroscopy; electron beam effects; hole traps; indium compounds; ion implantation; minority carriers; semiconductor epitaxial layers; solar cells; Frenkel pair; III-V semiconductor; InP solar cells; annealing effects; carrier loss; cell efficiency; critical cell parameters; deep level transient spectroscopy; degradation; electron irradiation; epitaxial junctions; hole traps; implanted diodes; p-type; processing-induced defects; radiation-induced defects; Annealing; Atmosphere; Diodes; Indium phosphide; Laboratories; Photovoltaic cells; Photovoltaic systems; Solar power generation; Spectroscopy; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147292
