DocumentCode :
3551883
Title :
Substrate orientation and growth temperature dependence of PL lifetimes in Ga0.52In0.48P
Author :
DeLong, M.C. ; Ohlsen, W.D. ; Taylor, P.C. ; Olson, J.M.
Author_Institution :
Dept. of Phys., Utah Univ., Salt Lake City, UT, USA
fYear :
1991
fDate :
8-11 Apr 1991
Firstpage :
68
Lastpage :
71
Abstract :
The lifetime of a photoluminescence (PL) emission in small bandgap Ga0.52In0.48P whose energy and lifetime depend strongly on excitation intensity is determined as a function of direction of substrate misorientation off (001) and growth temperature. The frequency and time dependence of the PL emission are discussed
Keywords :
III-V semiconductors; gallium compounds; indium compounds; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; vapour phase epitaxial growth; Ga0.52In0.48P; III-V semiconductor; OMVPE; excitation intensity; frequency dependence; growth temperature dependence; lifetime; photoluminescence; small bandgap; substrate misorientation; time dependence; Digital audio players; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
Type :
conf
DOI :
10.1109/ICIPRM.1991.147295
Filename :
147295
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3551883
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