Highly uniform 2"φ Fe-doped InP epitaxial layer grown by N2 carrier gas mixed chloride vapor phase epitaxy

The growth of high quality Fe-doped InP epitaxial layers by the chloride vapor phase epitaxy (VPE) method using N₂ as a carrier gas instead of conventional H₂ in the Fe source region is described. It is shown that Fe doping was achieved by introducing FeCl₂ to the growth region, bypassing the In source region. Reactor growth conditions have been optimized for a 2"φ wafer by examining the relationship between growth conditions and the distributions of resistivities and photoluminescence (PL) intensities. Excellent resistivity and thickness uniformity have been obtained by changing the distance between the gas mixing position and InP substrate and precisely controlling the growth temperature. About 92% of the area of the 2"φ wafer showed resistivities between 5×10⁷ and 5×10⁸ Ω-cm, and the maximum thickness deviation from the average of 2.7 μm was within 2%