DocumentCode
3551890
Title
Selective growth of InP in the low pressure hydride VPE system
Author
Beccard, R. ; Dehe, A. ; Heime, K. ; Laube, G. ; Speier, P.
Author_Institution
Inst. fur Halbleitertech., Aachen, Germany
fYear
1991
fDate
8-11 Apr 1991
Firstpage
93
Lastpage
96
Abstract
The selective growth in a low-pressure vapor phase epitaxy (LP-VPE) system is discussed. It is shown that selectivity is high in a wide range of deposition temperatures. The shape of the selectively grown structures is determined by growth kinetics. Only at high temperatures do mass transport effects have an increased influence. The influence of the width of the mask openings on the growth rate is low
Keywords
III-V semiconductors; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; III-V semiconductor; InP epilayers; deposition temperatures; growth kinetics; low pressure hydride VPE system; mask openings; mass transport effects; selective growth; Epitaxial growth; Indium phosphide; Kinetic theory; Shape measurement; Size measurement; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location
Cardiff
Print_ISBN
0-87942-626-8
Type
conf
DOI
10.1109/ICIPRM.1991.147301
Filename
147301
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