Title :
Strong intersubband absorption in a single doped pseudomorphic InAs/In0.53Ga0.47As/AlAs quantum well on InP
Author :
Peng, L.H. ; Broekaert, T.P. ; Choi, W.Y. ; Vlcek, J.C. ; Fonstad, C.G. ; Jones, R.V.
Author_Institution :
Div. of Appl. Sci., Harvard Univ., Cambridge, MA, USA
Abstract :
Quantum well infrared intersubband (QWII) absorption in a single doped InAs/InGaAs/AlAs quantum well (SQW) is discussed. Absorption as large as 8% was observed for SQWs measured in a waveguide geometry. The SQW absorption shows relatively little polarization dependence. Strongly polarized infrared absorption, seen in the spectra arising from transitions between the occupied Fe level and the ionized Si donor level at the InGaAs/Fe:InP interface, and multiple phonon excitation, observed in the Fe-doped semi-insulating InP substrate, are described
Keywords :
Fourier transform spectra; III-V semiconductors; aluminium compounds; gallium arsenide; impurity and defect absorption spectra of inorganic solids; indium compounds; infrared spectra of inorganic solids; interface electron states; semiconductor epitaxial layers; semiconductor quantum wells; FTIR spectra; III-V semiconductor; InAs-InGaAs-AlAs quantum well; InGaAs-InP:Fe; InP:Fe substrate; SQW; interface localised state absorption; intersubband absorption; multiple phonon excitation; polarized infrared absorption; pseudomorphic; terraced quantum wells; Electromagnetic wave absorption; Excitons; Gallium arsenide; Geometry; Indium gallium arsenide; Indium phosphide; Infrared detectors; Infrared spectra; Polarization; Quantum well devices;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147312
