DocumentCode
3551968
Title
Third International Conference. Indium Phosphide and Related Materials (Cat. No.91CH2950-4)
fYear
1991
fDate
8-11 April 1991
Abstract
The following topics are dealt with: bulk growth and wafer technology; solar cells; epitaxy; optoelectronics; multiple quantum well lasers; HBTs and HIGFETs; dry etching techniques; device fabrication techniques; electron devices and bulk crystal growth; HEMTs; optoelectronic integrated circuits; FETs; epitaxial processing; multiple quantum well photonic devices; fabrication technology of quantum well devices; surface treatment
Keywords
III-V semiconductors; indium compounds; integrated circuit technology; optoelectronic devices; semiconductor devices; semiconductor growth; semiconductor technology; FET; HBT; HEMT; HIGFET; III-V semiconductor; InP; bulk growth; device fabrication techniques; dry etching techniques; electron devices; epitaxial processing; epitaxy; multiple quantum well lasers; multiple quantum well photonic devices; optoelectronic integrated circuits; optoelectronics; solar cells; surface treatment; wafer technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location
Cardiff, UK
Print_ISBN
0-87942-626-8
Type
conf
DOI
10.1109/ICIPRM.1991.147313
Filename
147313
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