DocumentCode
3551974
Title
Surface etching for light trapping in encapsulated InP solar cells
Author
Jenkins, Phillip ; Landis, Geoffrey A.
Author_Institution
Space Photovoltaic Res. Center. Cleveland State Univ., OH, USA
fYear
1991
fDate
8-11 Apr 1991
Firstpage
164
Lastpage
167
Abstract
A technique for reducing the reflectance of glass-encapsulated InP, which is important for increasing the efficiency of solar cells and photodetectors, is described. The technique produces low-angle grooves on the surface by a maskless anisotropic etch. Light reflected from the low angle grooves is trapped by total internal reflection at the glass/air interface and directed back to the InP surface. Measurements indicating a significant decrease in surface reflection are presented
Keywords
III-V semiconductors; encapsulation; etching; indium compounds; reflectivity; solar cells; III-V semiconductor; InP solar cells; InP surface; V-grooves; efficiency; glass-encapsulated; glass/air interface; light trapping; low-angle grooves; maskless anisotropic etch; reflectance; surface etching; total internal reflection; Etching; Indium phosphide; Optical reflection; Photodetectors; Photovoltaic cells; Photovoltaic systems; Production; Reflectivity; Solar power generation; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location
Cardiff
Print_ISBN
0-87942-626-8
Type
conf
DOI
10.1109/ICIPRM.1991.147319
Filename
147319
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