Comparison of n+p and p+n structures in indium phosphide solar cells

The expected performances of n⁺p and p⁺n indium phosphide solar cells are compared. PC-1D, a quasi-one-dimensional computer program based on solving semiconductor transport equations by a finite-element method, was used to model n⁺p and p⁺n indium phosphide solar cell structures. The calculations show that the n⁺p structure offers a better short-circuit current, but that the p⁺n structure offers improved open-circuit voltage and overall gain in cell efficiency. The radiation resistance of p⁺n InP cells is compared to that of n⁺p cells. It is shown that the conflicting results obtained in experiments indicate the need for a systematic reevaluation of the comparative radiation resistance of the two InP cell configurations