Title :
Comparison of RF diode and magnetron sputtering for the fabrication of ITO/InP solar cells
Author :
Pearsal, N.M. ; Forbes, I. ; Winckler, J.M. ; Thomas, H. ; Luo, J.K.
Author_Institution :
Newcastle Photovoltaics Applications Centre, Newcastle upon Tyne Polytech., UK
Abstract :
RF diode and RF magnetron sputtering of indium tin oxide (ITO), using the same deposition conditions, are compared for the fabrication of ITO/InP solar cells. Current-voltage, capacitance, and deep level transient spectroscopy (DLTS) measurements are presented. It is concluded that, for tie conditions studied, magnetron sputtering gives better results, although the cell performance is more dependent on predeposition plasma treatment than on the deposition mode
Keywords :
III-V semiconductors; deep level transient spectroscopy; indium compounds; semiconductor growth; solar cells; sputter deposition; tin compounds; DLTS; III-V semiconductor; ITO-InP solar cells; InSnO-InP; RF diode sputtering; RF magnetron sputtering; capacitance measurements; cell performance; current-voltage measurements; fabrication; predeposition plasma treatment; Capacitance; Diodes; Fabrication; Indium phosphide; Indium tin oxide; Photovoltaic cells; Plasma measurements; Radio frequency; Spectroscopy; Sputtering;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147321
