Comparison of RF diode and magnetron sputtering for the fabrication of ITO/InP solar cells

Author

Pearsal, N.M. ; Forbes, I. ; Winckler, J.M. ; Thomas, H. ; Luo, J.K.

Author_Institution

Newcastle Photovoltaics Applications Centre, Newcastle upon Tyne Polytech., UK

fYear

1991

fDate

8-11 Apr 1991

Firstpage

173

Lastpage

176

Abstract

RF diode and RF magnetron sputtering of indium tin oxide (ITO), using the same deposition conditions, are compared for the fabrication of ITO/InP solar cells. Current-voltage, capacitance, and deep level transient spectroscopy (DLTS) measurements are presented. It is concluded that, for tie conditions studied, magnetron sputtering gives better results, although the cell performance is more dependent on predeposition plasma treatment than on the deposition mode

Keywords

III-V semiconductors; deep level transient spectroscopy; indium compounds; semiconductor growth; solar cells; sputter deposition; tin compounds; DLTS; III-V semiconductor; ITO-InP solar cells; InSnO-InP; RF diode sputtering; RF magnetron sputtering; capacitance measurements; cell performance; current-voltage measurements; fabrication; predeposition plasma treatment; Capacitance; Diodes; Fabrication; Indium phosphide; Indium tin oxide; Photovoltaic cells; Plasma measurements; Radio frequency; Spectroscopy; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147321

Filename

147321