DocumentCode
3552009
Title
Stray capacitance in thin film circuits
Author
Happ, W.W
Author_Institution
Lockheed Missiles & Space Company, Sunnyvale, California
Volume
8
fYear
1962
fDate
1962
Firstpage
42
Lastpage
42
Abstract
The interelectrode capacitance in film-type circuits becomes a critical design limitation as dimensions decrease and as substrates of high dielectric constants are developed. Design charts and engineering approximations are presented and illustrated by evaluating the effect of stray capacitance on a completed film-type IF amplifier circuit.
Keywords
Capacitance; Design engineering; Dielectric substrates; Diffusion processes; Frequency; High-K gate dielectrics; Missiles; Oscillators; Resonance; Thin film circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1962 International
Type
conf
DOI
10.1109/IEDM.1962.187300
Filename
1473327
Link To Document