Growth of ⟨100⟩ InP single crystals in quartz crucibles using the VGF technique

The growth of large diameter twin-free InP single crystals in the ⟨100⟩ orientation using the vertical gradient freeze (VGF) technique is discussed. The crystals were grown in quartz crucibles. An etch pit density (EPD) of <2×10⁴/cm² has been achieved in the ⟨100⟩ quartz-grown crystals. Both low S-doped, n-type (<5×10¹⁷/cm³) and high resistivity (<10⁶ Ω-cm) Fe-doped crystals have been grown using this technique. Glow discharge mass spectrometry indicates that the use of a quartz crucible does not result in an unacceptable level of silicon incorporation into the crystal. This result is confirmed by the Hall effect measurement, which indicates that for the same weight percent Fe-doping, the resistivity of quartz-grown crystal is comparable to that of PBN-grown crystal