DocumentCode :
3552036
Title :
Study of the effects of fast neutrons on silicon controlled rectifiers
Author :
Leith, Frank A.
Author_Institution :
Massachusetts Institute of Technology, Cambridge, Massachusetts
Volume :
8
fYear :
1962
fDate :
1962
Firstpage :
72
Lastpage :
72
Abstract :
The controlled rectifier, while it has come into use only recently, has properties which make its use in a nuclear environment probable. Because of this, an investigation was conducted to determine the effects of fast neutrons on silicon controlled rectifiers. Ten General Electric 4JC35 silicon controlled rectifiers were subjected to a maximum integrated fast neutron flux of 4 \\times 10^{13} nvt/cm2in the M. I. T. Nuclear Reactor. An increase in the emitter current required to obtain a given value of alpha was observed after irradiation. This increase is attributed to an increase in the bulk recombination in the base region. The variation of alpha with emitter current in the controlled rectifier is attributed to recombination in the space charge layer.
Keywords :
Current measurement; Neutrons; Rectifiers; Space charge; Thyristors; Time measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1962 International
Type :
conf
DOI :
10.1109/IEDM.1962.187324
Filename :
1473351
Link To Document :
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