DocumentCode
3552036
Title
Study of the effects of fast neutrons on silicon controlled rectifiers
Author
Leith, Frank A.
Author_Institution
Massachusetts Institute of Technology, Cambridge, Massachusetts
Volume
8
fYear
1962
fDate
1962
Firstpage
72
Lastpage
72
Abstract
The controlled rectifier, while it has come into use only recently, has properties which make its use in a nuclear environment probable. Because of this, an investigation was conducted to determine the effects of fast neutrons on silicon controlled rectifiers. Ten General Electric 4JC35 silicon controlled rectifiers were subjected to a maximum integrated fast neutron flux of
nvt/cm2in the M. I. T. Nuclear Reactor. An increase in the emitter current required to obtain a given value of alpha was observed after irradiation. This increase is attributed to an increase in the bulk recombination in the base region. The variation of alpha with emitter current in the controlled rectifier is attributed to recombination in the space charge layer.
nvt/cm2in the M. I. T. Nuclear Reactor. An increase in the emitter current required to obtain a given value of alpha was observed after irradiation. This increase is attributed to an increase in the bulk recombination in the base region. The variation of alpha with emitter current in the controlled rectifier is attributed to recombination in the space charge layer.Keywords
Current measurement; Neutrons; Rectifiers; Space charge; Thyristors; Time measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1962 International
Type
conf
DOI
10.1109/IEDM.1962.187324
Filename
1473351
Link To Document