• DocumentCode
    3552036
  • Title

    Study of the effects of fast neutrons on silicon controlled rectifiers

  • Author

    Leith, Frank A.

  • Author_Institution
    Massachusetts Institute of Technology, Cambridge, Massachusetts
  • Volume
    8
  • fYear
    1962
  • fDate
    1962
  • Firstpage
    72
  • Lastpage
    72
  • Abstract
    The controlled rectifier, while it has come into use only recently, has properties which make its use in a nuclear environment probable. Because of this, an investigation was conducted to determine the effects of fast neutrons on silicon controlled rectifiers. Ten General Electric 4JC35 silicon controlled rectifiers were subjected to a maximum integrated fast neutron flux of 4 \\times 10^{13} nvt/cm2in the M. I. T. Nuclear Reactor. An increase in the emitter current required to obtain a given value of alpha was observed after irradiation. This increase is attributed to an increase in the bulk recombination in the base region. The variation of alpha with emitter current in the controlled rectifier is attributed to recombination in the space charge layer.
  • Keywords
    Current measurement; Neutrons; Rectifiers; Space charge; Thyristors; Time measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1962 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1962.187324
  • Filename
    1473351