Title :
A very wide spectrum superluminescent diode at 1.3 μm
Author :
Mikami, Osamu ; Noguchi, Yoshio ; Yasaka, Hiroshi
Author_Institution :
NTT Opto-electron. Lab., Atsugi, Japan
Abstract :
An approach that broadens the emission spectral width of superluminescent diodes (SLDs) is proposed. The fabrication of 1.3-μm InGaAsP/InP SLDs incorporating a structure of tandem active layers is described. For this device, the spectral width is broadened over 100 nm, achieving a short coherence length of 9.2 μm, one-fourth that of conventional 1.3-μm SLDs
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; light sources; superradiance; 1.3 micron; III-V semiconductors; InGaAsP-InP diode; emission spectral width; fabrication; short coherence length; superluminescent diode; tandem active layers; very wide spectrum; Coherence; Diode lasers; Epitaxial growth; Indium phosphide; Length measurement; Optical sensors; Photonic band gap; Power generation; Stimulated emission; Superluminescent diodes;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147339
