Title :
Effect of structural parameters on InGaAs/InAlAs 2DEG characteristics
Author :
Tischler, M.A. ; Parker, B.D. ; Goorsky, M.S. ; Mooney, P.M.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
It is shown that superlattices or very thick buffer layers are not necessary to achieve high mobility in InGaAs/InAlAs 2DEG structures. However, an InAlAs buffer is required to prevent the formation of a sheet charge at the back interface of the InGaAs channel when it is grown directly on InP heated in an As flux. It is found that bulk InAlAs is not characterized by persistent photoconductivity (PPC) or carrier freezeout and that the transport properties of the two-dimensional electron gas (2DEG) structures are must less affected by cooling and illumination than comparable AlGaAs/GaAs structures
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; electron gas; gallium arsenide; indium compounds; semiconductor junctions; 2D electron gas structures; 2DEG characteristics; As flux; HEMT; InAlAs buffer; InGaAs channel; InGaAs-InAlAs; InP; cooling; high mobility; illumination; structural parameters; transport properties; two-dimensional electron gas; Buffer layers; Cooling; Electrons; Indium compounds; Indium gallium arsenide; Indium phosphide; Lighting; Photoconductivity; Structural engineering; Superlattices;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147342
