InGaAs/InP double-heterojunction bipolar transistors with graded-InGaAsP between InGaAs base and InP collector grown by metal organic chemical vapor deposition

Author

Ohkubo, M. ; Iketani, A. ; Ijichi, T. ; Kikuta, T.

Author_Institution

Furukawa Electr.-Co. Ltd., Yokohama, Japan

fYear

1991

fDate

8-11 Apr 1991

Firstpage

234

Lastpage

237

Abstract

The fabrication of InGaAs/InP double-heterojunction bipolar transistors (D-HBTs) grown by metal organic chemical vapor deposition (MOCVD) is described. With graded-InGaAsP layers inserted between the p ⁺ InGaAs base and n^- InP collector, the current gain of D-HBTs with graded layers was found to be about twice as large as that of D-HBTs without graded layers, and the dependence of collector current on collector/emitter voltage was smaller than without graded layers. The current gain was measured up to 2300 with 25×25 μm ² emitter area at a collector current density of 1×10 ⁴ A/cm²

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor growth; vapour phase epitaxial growth; D-HBTs; HBT; InGaAs-InP; MOCVD; chemical vapor deposition; collector current; collector/emitter voltage; current gain; double-heterojunction bipolar transistors; fabrication; graded-InGaAsP layers; metal organic CVD; n^- InP collector; p⁺ InGaAs base; Area measurement; Bipolar transistors; Chemical vapor deposition; Density measurement; Fabrication; Indium gallium arsenide; Indium phosphide; MOCVD; Organic chemicals; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147344

Filename

147344