Title :
Reactively ion etched nonuniform-depth grating for advanced DFB lasers
Author :
Matsuda, Manabu ; Kotaki, Yuji ; Ishikawa, Hiroshi ; Wada, Osamu
Author_Institution :
Fujitsu Lab. Ltd., Kanagawa, Japan
Abstract :
An ethane (C2H2) reactive ion etching (RIE) technique that offers smooth-etched morphology, high controllability of depth, and anisotropic geometries for forming a nonuniform-depth grating on an InP substrate is discussed. The fabrication of a λ/4-shifted multiple quantum well (MQW) distributed feedback (DFB) laser with a 900 μm cavity and a nonuniform-depth grating is described. It is shown that the larger threshold gain difference predicted by theory is obtained despite strong hole-burning
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; indium compounds; integrated optics; optical workshop techniques; semiconductor junction lasers; sputter etching; λ/4-shifted; 900 micron; C2H2; DFB lasers; InP substrate; MQW; RIE; anisotropic geometries; distributed feedback; ethane; fabrication; hole-burning; multiple quantum well; nonuniform-depth grating; reactive ion etching; semiconductor lasers; smooth-etched morphology; Anisotropic magnetoresistance; Controllability; Distributed feedback devices; Etching; Geometrical optics; Gratings; Indium phosphide; Morphology; Optical device fabrication; Quantum well devices;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147347
