Fabrication of long wavelength QEICs using GaAs on InP epitaxial lift-off technology

Author

Pollentier, I. ; Demeester, P. ; Van Daele, P. ; Rondi, D. ; Glastre, G. ; Enard, A. ; Blondeau, R.

Author_Institution

Lab. of Electromagn. & Acoust., Gent Univ., Belgium

fYear

1991

fDate

8-11 Apr 1991

Firstpage

268

Lastpage

271

Abstract

The integration of GaAs MESFET circuits with InP components using epitaxial lift-off (ELO) technology is discussed. Specific ELO problems (film-substrate isolation, alignment) and solutions as well as the various ways to integrate MESFETs on InP are described. The fabrication of a long wavelength OEIC, in which a GaAs ELO MESFET is integrated with an InP 2×2 buried waveguide optical switch (fully interconnected oil chip), is presented

Keywords

Schottky gate field effect transistors; field effect integrated circuits; integrated circuit technology; integrated optoelectronics; optical switches; optical waveguides; photolithography; GaAs MESFET circuits; GaAs-InP; alignment; buried waveguide optical switch; epitaxial lift-off technology; fabrication; film-substrate isolation; liftoff technique; long wavelength QEICs; semiconductor; Gallium arsenide; Indium phosphide; Integrated circuit interconnections; Integrated circuit technology; Isolation technology; MESFET circuits; Optical device fabrication; Optical switches; Optical waveguides; Optoelectronic devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1991., Third International Conference.

Conference_Location

Cardiff

Print_ISBN

0-87942-626-8

Type

conf

DOI

10.1109/ICIPRM.1991.147350

Filename

147350