Title :
W-band InP Gunn diodes with optimized linearly graded profiles
Author :
Kurita, H. ; Yokohata, A. ; Kodama, A. ; Suga, K. ; Kato, S. ; Ohmori, M.
Author_Institution :
Nippon Min. Co. Ltd., Saitama, Japan
Abstract :
The I-V characteristics and RF performances of W-band InP Gunn diodes with linearly graded doping profiles are presented. Measurements performed on a fabricated diode indicate all output power of 135 mW with 3.0% efficiency at 90 GHz and output power of 117 mW with 2.7% at 94 GHz. The efficiencies are about 1.5 times larger than the best efficiency obtained for flat diodes
Keywords :
Gunn diodes; III-V semiconductors; doping profiles; indium compounds; 117 to 135 mW; 2.7 to 3 percent; 90 to 94 GHz; EHF; Gunn diodes; I-V characteristics; InP; RF performances; W-band; doping profiles; microwave device; optimized linearly graded profiles; Cathodes; Doping profiles; Electrons; Gunn devices; Indium phosphide; Power generation; Radio frequency; Schottky diodes; Temperature; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147353
