Title :
Low-frequency gain dispersion, optical response, and 1/f noise in ion-implanted InP JFETs
Author :
Kruppa, W. ; Boos, J.B. ; Carruthers, T.F.
Author_Institution :
SFA Inc., Landover, MD, USA
Abstract :
The effects of trapping mechanisms on the transconductance, output resistance, optical response, and low-frequency noise of an ion-implanted InP JFET are discussed. The results indicate a decrease in both the transconductance and output resistance occurring primarily between 100 Hz and 100 kHz. Optical response time constants and noise peaks corresponding to these frequencies were observed. The primary trapping mechanism responsible for the low-field transconductance dispersion appears to be a surface state with an activation energy of 0.28 eV
Keywords :
III-V semiconductors; electron device noise; electron traps; hole traps; indium compounds; ion implantation; junction gate field effect transistors; random noise; 1/f noise; 100 Hz to 100 kHz; InP; LF characteristics; activation energy; gain dispersion; ion-implanted InP JFETs; low-frequency noise; optical response; output resistance; surface state; transconductance; trapping mechanisms; Dispersion; Electrical resistance measurement; Frequency; Indium phosphide; JFETs; Low-frequency noise; Optical noise; Resistors; Transconductance; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location :
Cardiff
Print_ISBN :
0-87942-626-8
DOI :
10.1109/ICIPRM.1991.147358
