DocumentCode
3552125
Title
Electrical and optical characterizations of Ga-doped or Sb-doped InP crystal
Author
Liu, Xunlang ; Ye, Shizhong ; Yang, Baohua ; Jiao, Jinghua ; Zhao, Jianqun
Author_Institution
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
fYear
1991
fDate
8-11 Apr 1991
Firstpage
315
Lastpage
318
Abstract
Electrical and optical characterizations of Ga-doped and Sb-doped InP crystal are presented. It is shown that doping with isoelectronic impurities, such as Ga or Sb, does not affect the electrical properties of InP crystal, dilute solid solutions are formed by doping InP with isoelectronic impurities, and native defects in InP can be reduced by doping with Sb
Keywords
III-V semiconductors; electrical conductivity of crystalline semiconductors and insulators; indium compounds; photoluminescence; semiconductor doping; InP:Ga; InP:Sb; PL spectra; dilute solid solutions; doping; electrical properties; isoelectronic impurities; native defects-reduction; optical characterizations; Atom optics; Atomic measurements; Crystals; Doping; Impurities; Indium phosphide; Microwave devices; Microwave theory and techniques; Optical scattering; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1991., Third International Conference.
Conference_Location
Cardiff
Print_ISBN
0-87942-626-8
Type
conf
DOI
10.1109/ICIPRM.1991.147361
Filename
147361
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